All publications

Simani, S.; Farsoni, S.; Castaldi, Paolo, Residual Generator Fuzzy Identification for Wind Farm Fault Diagnosis, in: Proceedings of the 19th IFAC World Congress, «IFAC PROCEEDINGS VOLUMES», 2014, 47, pp. 4310 - 4315 (atti di: !9th IFAC world Congress, Cape Town, South Africa, August 24-29, 2014) [Contribution to conference proceedings]

Guidorzi, Roberto; Marro, Giovanni; Diversi, Roberto; Soverini, Umberto, On the use of quasi-positive versus positive state-space models of externally positive discrete-time systems, in: Proceedings of the 21st International Symposium on Mathematical Theory of Networks and Systems, 2014, pp. 1511 - 1516 (atti di: 21st International Symposium on Mathematical Theory of Networks and Systems (MTNS 2014), Groningen, Olanda, 7-11 Luglio 2014) [Contribution to conference proceedings]

Torsten Söderström; Roberto Diversi; Umberto Soverini, A unified framework for EIV identification methods in the presence of mutually correlated noises, in: Proceedings of the 19th IFAC World Congress, International Federation of Automatic Control, 2014, pp. 4644 - 4649 (atti di: 19th IFAC World Congress, Cape Town, Sudafrica, 24-29 Agosto 2014) [Contribution to conference proceedings]

Loncarski, Jelena; Leijon, Mats; Rossi, Claudio; Srndovic, Milan; Grandi, Gabriele, Current Ripple Evaluation in Dual Three-Phase Inverters for Open-End Winding EV Drives, in: Proc. of 3rd IEEE International Conference on Connected Vehicles & Expo - ICCVE 2014, Vienna, IEEE, 2014, pp. 507 - 513 (atti di: 2014 International Conference on Connected Vehicles and Expo (ICCVE), Vienna, 3-7 november 2014) [Contribution to conference proceedings]

M., Marzinotto; Mazzanti, Giovanni, Merging the electro-thermal life model for power cables with the statistical volume enlargement law, in: Atti della 2014 IEEE Conference on Electrical Insulation and Dielectric Phenomena (IEEE CEIDP 2014), Piscataway, New Jersey, IEEE, 2014, pp. 502 - 505 (atti di: 2014 IEEE Conference on Electrical Insulation and Dielectric Phenomena (IEEE CEIDP 2014), Des Moines, Iowa (USA), 19-23 ottobre 2014) [Contribution to conference proceedings]

Morandi, Antonio; M., Marzinotto; Mazzanti, Giovanni, Feasibility of High Voltage DC superconducting cables with extruded warm dielectric, in: Atti della 2014 IEEE Conference on Electrical Insulation and Dielectric Phenomena (IEEE CEIDP 2014), Piscataway, New Jersey, IEEE, 2014, pp. 796 - 799 (atti di: 2014 IEEE Conference on Electrical Insulation and Dielectric Phenomena (IEEE CEIDP 2014), Des Moines, Iowa, 19-23 ottobre 2014) [Contribution to conference proceedings]

Baravelli, Emanuele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2014, 61, pp. 473 - 478 [Scientific article]

Baravelli, Emanuele; Gnani, Elena; Grassi, Roberto; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Optimization of n-and p-type TFETs integrated on the same InAs/Al xGa1-xSb technology platform, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2014, 61, pp. 178 - 185 [Scientific article]

Imperiale, Ilaria; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Nguyen, L.; Denison, M., TCAD modeling of charge transport in HV-IC encapsulation materials, in: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014, pp. 450 - 453 (atti di: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Waikoloa, Hawaii (USA), June 15-19, 2014) [Contribution to conference proceedings]

Susanna Reggiani; Gaetano Barone; Elena Gnani; Antonio Gnudi; Giorgio Baccarani; Stefano Poli; Rick Wise; Ming-Yeh Chuang; Weidong Tian; Sameer Pendharkar; Marie Denison, Characterization and modeling of electrical stress degradation in STI-based integrated power devices, «SOLID-STATE ELECTRONICS», 2014, 102, pp. 25 - 41 [Scientific article]

Villani, F.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G., A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs, in: 2014 44th European Solid State Device Research Conference (ESSDERC), Bez, R; Pavan, P; Meneghesso, G;, 2014, pp. 262 - 265 (atti di: 2014 44th European Solid State Device Research Conference (ESSDERC), Venice, Italy, Sept 22-26, 2014) [Contribution to conference proceedings]

Monti, Federico; Reggiani, Susanna; Barone, G.; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Poli, S.; Chuang, M. Y.; Tian, W.; Varghese, D.; Wise, R., TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions, in: Proceedings of the 2014 44th European Solid State Device Research Conference (ESSDERC 2014), 2014, pp. 333 - 336 (atti di: 2014 44th European Solid State Device Research Conference (ESSDERC 2014), Venice, Italy, Sept 22-26, 2014) [Contribution to conference proceedings]

Baravelli, E.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G., Capacitance estimation for InAs Tunnel FETs by means of full-quantum k·p simulation, in: 2014 15th International Conference on Ultimate Integration on Silicon (ULIS), 2014, pp. 17 - 20 (atti di: ULIS 2014 - 2014 15th International Conference on Ultimate Integration on Silicon, Stockholm, Sweden, 5-7 April 2014) [Contribution to conference proceedings]

Imperiale, Ilaria; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Nguyen, L.; Denison, M., TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime, in: Proceedings of the 2014 44th European Solid State Device Research Conference (ESSDERC 2014), 2014, pp. 325 - 328 (atti di: 44th European Solid State Device Research Conference (ESSDERC), Venice, Italy, Sept 22-26, 2014) [Contribution to conference proceedings]

Maiorano, P.; Gnani, E.; Grassi, R.; Gnudi, A.; Reggiani, S.; Baccarani, G., Investigation on the electrical properties of superlattice FETs using a non-parabolic band model, «SOLID-STATE ELECTRONICS», 2014, 98, pp. 45 - 49 [Scientific article]

DI LECCE, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation, in: 2014 44th European Solid State Device Research Conference (ESSDERC), Bez, R; Pavan, P; Meneghesso, G;, 2014, pp. 313 - 316 (atti di: 2014 44th European Solid State Device Research Conference (ESSDERC), Venice, Italy, Sept 22-26, 2014) [Contribution to conference proceedings]

Reggiani, Susanna; Monti, Federico; G., Barone; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; S., Poli; M. Y., Chuang; W., Tian; R., Wise, Linear drain current degradation of STI-based LDMOS transistors under AC stress conditions, in: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2014, pp. 193 - 196 (atti di: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Waikoloa, Hawaii (USA), June 15-19, 2014) [Contribution to conference proceedings]

Pasquale, Maiorano; Elena, Gnani; Antonio, Gnudi; Susanna, Reggiani; Giorgio, Baccarani, Design and optimization of impurity- and electrostatically-doped superlattice FETs to meet all the ITRS power targets at VDD=0.4V, «SOLID-STATE ELECTRONICS», 2014, 101, pp. 70 - 78 [Scientific article]

R. Grassi; A. Gnudi; V. Di Lecce; E. Gnani; S. Reggiani; G. Baccarani, Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback, «SOLID-STATE ELECTRONICS», 2014, 100, pp. 54 - 60 [Scientific article]

BETTI BENEVENTI, Giovanni; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2014, 61, pp. 776 - 784 [Scientific article]