All publications

Reznikov, Boris; Srndovic, Milan; Grandi, Gabriele; Rakhim, Bexultan; Familiant, Yakov L.; Ruderman, Alex, Asymptotic time domain evaluation of a single-phase multilevel PWM inverter current quality, in: Proc. of the 18th IEEE International Conference on ELECTRICAL DRIVES and POWER ELECTRONICS (EDPE 2015), IEEE, 2015, pp. 42 - 47 (atti di: IEEE - ELECTRICAL DRIVES and POWER ELECTRONICS - EDPE 2015, Tatranská Lomnica, The High Tatras, Slovakia, 21 - 23 September 2015) [Contribution to conference proceedings]

Govoni, M.; Boatto, G.; Guidi, F.; Vitucci, E.M.; Degli Esposti, V.; Tartarini, G.; Dardari, D., UWB-over-Fiber system for railroad crossing surveillance, in: Fotonica AEIT Italian Conference on Photonics Technologies, 2015, IET, 2015, 2015, pp. 1 - 4 (atti di: AEIT Italian Conference on Photonics Technologies (Fotonica 2015), Turin, Italy, 6-8 May 2015) [Contribution to conference proceedings]

A. Guidotti; D. Tarchi; V. Icolari; A. Vanelli-Coralli; G. E. Corazza, Spectrum Awareness Techniques for 5G Satellite Communications, in: 2015 European Signal Processing Conference (EUSIPCO 2015), «EUSIPCO ...», 2015, pp. 2811 - 2815 (atti di: 2015 European Signal Processing Conference (EUSIPCO 2015), Nizza, Francia, 31 Agosto - 4 Settembre 2015) [Contribution to conference proceedings]

Zaccaria, M.; Fabiani, D.; Cannucciari, G.; Gualandi, C.; Focarete, M.L.; Arbizzani, C.; De Giorgio, F.; Mastragostino, M., Effect of silica and tin oxide nanoparticles on properties of nanofibrous electrospun separators, «JOURNAL OF THE ELECTROCHEMICAL SOCIETY», 2015, 162, pp. A915 - A920 [Scientific article] Open Access

Andrea Natale Tallarico; Paolo Magnone; Giacomo Barletta; Angelo Magrì; Enrico Sangiorgi; Claudio Fiegna, Modeling Spatial and Energy Oxide Trap Distribution Responsible for NBTI in p-Channel Power U-MOSFETs, in: ISPSD 2015, IEEE, 2015, pp. 153 - 156 (atti di: 27th IEEE International Symposium on Power Semiconductor Devices and IC's, Hong Kong, China, 10-14 May 2015) [Contribution to conference proceedings]

D'Elia, Alfredo; Viola, Fabio; Montori, Federico; Di Felice, Marco; Bedogni, Luca; Bononi, Luciano; Borghetti, Alberto; Azzoni, Paolo; Bellavista, Paolo; Tarchi, Daniele; Mock, Randolf; Salmon Cinotti, Tullio, Impact of Interdisciplinary Research on Planning, Running, and Managing Electromobility as a Smart Grid Extension, «IEEE ACCESS», 2015, 3, pp. 2281 - 2305 [Scientific article] Open Access

Schneider, Michael; Stenger, Andreas; Schwahn, Fabian; Vigo, Daniele, Territory-based vehicle routing in the presence of time-window constraints, «TRANSPORTATION SCIENCE», 2015, 49, pp. 732 - 751 [Scientific article]

Zakharov, Alexey; Zattoni, Elena; Yu, Miao; Jämsä-Jounela, Sirkka-Liisa, A performance optimization algorithm for controller reconfiguration in fault tolerant distributed model predictive control, «JOURNAL OF PROCESS CONTROL», 2015, 34, pp. 56 - 69 [Scientific article]

Di Lecce, Valerio; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, Graphene-base heterojunction transistors for post-CMOS high-speed applications: Hopes and challenges, in: Device Research Conference (DRC), 2015 73rd Annual, 2015, pp. 91 - 92 (atti di: 2015 73rd Annual Device Research Conference (DRC), Columbus, OH, 21-24 June 2015) [Contribution to conference proceedings]

Di Lecce, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics, «SOLID-STATE ELECTRONICS», 2015, 114, pp. 23 - 29 [Scientific article]

Di Lecce, Valerio; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, Simulations of Graphene Base Transistors with Improved Graphene Interface Model, «IEEE ELECTRON DEVICE LETTERS», 2015, 36, pp. 969 - 971 [Scientific article]

Imperiale, Ilaria; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Nguyen, Luu; Hernandez-Luna, Alex; Huckabee, James; Denison, Marie; Varghese, Dhanoop, Role of encapsulation formulation on charge transport phenomena and HV device instability, in: Proceedings - Electronic Components and Technology Conference, Institute of Electrical and Electronics Engineers Inc., 2015, 2015-, pp. 159 - 167 (atti di: 2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015, Sheraton San Diego Hotel and Marina, usa, 2015) [Contribution to conference proceedings]

Villani, F.; Gnani, E; Gnudi, A.; Reggiani, S.; Baccarani, G., A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs, «SOLID-STATE ELECTRONICS», 2015, 113, pp. 86 - 91 [Scientific article]

Reggiani, Susanna; Barone, Gaetano; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Poli, Stefano; Wise, Rick; Chuang, Ming-Yeh; Tian, Weidong; Pendharkar, Sameer; Denison, Marie, Characterization and modeling of high-voltage LDMOS transistors, in: Hot Carrier Degradation in Semiconductor Devices, Cham, Switzerland, Springer International Publishing, 2015, pp. 309 - 339 [Chapter or essay]

Monti, F; Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Hernandez-Luna, A.; Huckabee, J.; Tipirneni, N.; Denison, M., Numerical study of GaN-on-Si HEMT breakdown instability accounting for substrate and packaging interactions, in: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, Institute of Electrical and Electronics Engineers Inc., 2015, 2015-, pp. 381 - 384 (atti di: 27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015, Kowloon Shangri-La, chn, 2015) [Contribution to conference proceedings]

Arienti, G; Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Hernandez-Luna, A.; Huckabee, J.; Denison, M., Optimization of HV LDMOS devices accounting for packaging interaction, in: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, Institute of Electrical and Electronics Engineers Inc., 2015, 2015-, pp. 305 - 308 (atti di: 27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015, Kowloon Shangri-La, chn, 2015) [Contribution to conference proceedings]

Cornigli, D.; Monti, F.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G., Leakage current and breakdown of GaN-on-Silicon vertical structures, in: EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Institute of Electrical and Electronics Engineers Inc., 2015, pp. 25 - 28 (atti di: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015, ita, 2015) [Contribution to conference proceedings]

Betti Beneventi, Giovanni; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Aliane, Alireza; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Baccarani, Giorgio, Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools, in: EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Institute of Electrical and Electronics Engineers Inc., 2015, pp. 241 - 244 (atti di: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015, ita, 2015) [Contribution to conference proceedings]

Maiorano, P.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G., Effects of Dit-induced degradation on InGaAs/InAlAs nanowire superlattice-FET using Al2O3 and HfO2/La2O3 as gate stacks, in: EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Institute of Electrical and Electronics Engineers Inc., 2015, pp. 57 - 60 (atti di: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015, ita, 2015) [Contribution to conference proceedings]

Betti Beneventi, Giovanni; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Alian, Alireza; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Baccarani, Giorgio, A TCAD Low-Field Electron Mobility Model for Thin-Body InGaAs on InP MOSFETs Calibrated on Experimental Characteristics, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2015, 62, pp. 3645 - 3652 [Scientific article]