All publications

Baravelli, Emanuele; Gnani, Elena; Grassi, Roberto; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Optimization of n-and p-type TFETs integrated on the same InAs/Al xGa1-xSb technology platform, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2014, 61, pp. 178 - 185 [Scientific article]

Imperiale, Ilaria; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Nguyen, L.; Denison, M., TCAD modeling of charge transport in HV-IC encapsulation materials, in: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014, pp. 450 - 453 (atti di: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Waikoloa, Hawaii (USA), June 15-19, 2014) [Contribution to conference proceedings]

Susanna Reggiani; Gaetano Barone; Elena Gnani; Antonio Gnudi; Giorgio Baccarani; Stefano Poli; Rick Wise; Ming-Yeh Chuang; Weidong Tian; Sameer Pendharkar; Marie Denison, Characterization and modeling of electrical stress degradation in STI-based integrated power devices, «SOLID-STATE ELECTRONICS», 2014, 102, pp. 25 - 41 [Scientific article]

Villani, F.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G., A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs, in: 2014 44th European Solid State Device Research Conference (ESSDERC), Bez, R; Pavan, P; Meneghesso, G;, 2014, pp. 262 - 265 (atti di: 2014 44th European Solid State Device Research Conference (ESSDERC), Venice, Italy, Sept 22-26, 2014) [Contribution to conference proceedings]

Monti, Federico; Reggiani, Susanna; Barone, G.; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Poli, S.; Chuang, M. Y.; Tian, W.; Varghese, D.; Wise, R., TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions, in: Proceedings of the 2014 44th European Solid State Device Research Conference (ESSDERC 2014), 2014, pp. 333 - 336 (atti di: 2014 44th European Solid State Device Research Conference (ESSDERC 2014), Venice, Italy, Sept 22-26, 2014) [Contribution to conference proceedings]

Baravelli, E.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G., Capacitance estimation for InAs Tunnel FETs by means of full-quantum k·p simulation, in: 2014 15th International Conference on Ultimate Integration on Silicon (ULIS), 2014, pp. 17 - 20 (atti di: ULIS 2014 - 2014 15th International Conference on Ultimate Integration on Silicon, Stockholm, Sweden, 5-7 April 2014) [Contribution to conference proceedings]

Imperiale, Ilaria; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Nguyen, L.; Denison, M., TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime, in: Proceedings of the 2014 44th European Solid State Device Research Conference (ESSDERC 2014), 2014, pp. 325 - 328 (atti di: 44th European Solid State Device Research Conference (ESSDERC), Venice, Italy, Sept 22-26, 2014) [Contribution to conference proceedings]

Maiorano, P.; Gnani, E.; Grassi, R.; Gnudi, A.; Reggiani, S.; Baccarani, G., Investigation on the electrical properties of superlattice FETs using a non-parabolic band model, «SOLID-STATE ELECTRONICS», 2014, 98, pp. 45 - 49 [Scientific article]

DI LECCE, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation, in: 2014 44th European Solid State Device Research Conference (ESSDERC), Bez, R; Pavan, P; Meneghesso, G;, 2014, pp. 313 - 316 (atti di: 2014 44th European Solid State Device Research Conference (ESSDERC), Venice, Italy, Sept 22-26, 2014) [Contribution to conference proceedings]

Reggiani, Susanna; Monti, Federico; G., Barone; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; S., Poli; M. Y., Chuang; W., Tian; R., Wise, Linear drain current degradation of STI-based LDMOS transistors under AC stress conditions, in: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2014, pp. 193 - 196 (atti di: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Waikoloa, Hawaii (USA), June 15-19, 2014) [Contribution to conference proceedings]

Pasquale, Maiorano; Elena, Gnani; Antonio, Gnudi; Susanna, Reggiani; Giorgio, Baccarani, Design and optimization of impurity- and electrostatically-doped superlattice FETs to meet all the ITRS power targets at VDD=0.4V, «SOLID-STATE ELECTRONICS», 2014, 101, pp. 70 - 78 [Scientific article]

R. Grassi; A. Gnudi; V. Di Lecce; E. Gnani; S. Reggiani; G. Baccarani, Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback, «SOLID-STATE ELECTRONICS», 2014, 100, pp. 54 - 60 [Scientific article]

BETTI BENEVENTI, Giovanni; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2014, 61, pp. 776 - 784 [Scientific article]

Hiroshi Ijima; Roberto Diversi; Eric Grivel, Iterative approach to estimate the parameters of a TVAR process corrupted by a MA noise, in: Proceedings of the 22nd European Signal Processing Conference, IEEE, 2014, pp. 456 - 460 (atti di: 22nd European Signal Processing Conference (EUSIPCO 2014), Lisbona, Portogallo, 1-5 Settembre 2014) [Contribution to conference proceedings]

Torsten Söderström; Roberto Diversi; Umberto Soverini, A unified framework for EIV identification methods when the measurement noises are mutually correlated, «AUTOMATICA», 2014, 50, pp. 3216 - 3223 [Scientific article]

P. Mancinelli; V. Santangelo; D. Fabiani; A. Saccani; M. Toselli; M. F. Frechette, LDPE composite materials obtained from building blocks containing standardized graphene interfaces, in: Proceedings of 2014 International Symposium on Electrical Insulating Materials, 2014, pp. 421 - 424 (atti di: International Symposium on Electrical Insulating Materials (ISEIM), Niigata (Japan), 1-5 June 2014) [Contribution to conference proceedings]

R. Baldacci; M. A. Boschetti; M. Ganovelli; V. Maniezzo, Algorithms for nesting with defects, «DISCRETE APPLIED MATHEMATICS», 2014, 163, pp. 17 - 33 [Scientific article]

Beneventi F.; Bartolini A.; Tilli A.; Benini L., An Effective Gray-Box Identification Procedure for Multicore Thermal Modelling, «IEEE TRANSACTIONS ON COMPUTERS», 2014, 63, pp. 1097 - 1110 [Scientific article]

A. Perelli; L. De Marchi; A. Marzani; N. Speciale, Frequency warped cross-wavelet multiresolution analysis of guided waves for impact localization, «SIGNAL PROCESSING», 2014, 96, pp. 51 - 62 [Scientific article]

Govoni M; Lotti F; Biagiotti L; Lannocca M; Pasquinelli G; Valente S; Muscari C; Bonafè F; Caldarera CM; Guarnieri C; Cavalcanti S; GIORDANO E., An innovative stand-alone bioreactor for the highly-reproducible transfer of cyclic mechanical stretch to stem cells cultured in a 3D scaffold., «JOURNAL OF TISSUE ENGINEERING AND REGENERATIVE MEDICINE», 2014, 8, pp. 787 - 793 [Scientific article]