Physical modeling, numerical simulation, and characterization of solid-state electron devices and sensors (ModSim)

The research activity of the group addresses the physical modeling, numerical simulation, and characterization of solid-state electron devices and sensors fabricated with emerging technologies. Specifically, the activities focus on devices based on carbon, 2D semiconductors, ferroelectric materials, III-V semiconductors, tunnel-effect transistors, phase-change memories, advanced silicon, GaN/AlGaN and SiC devices for high-voltage applications. Physical modeling is an essential aspect for better understanding the physical properties of the devices under investigation, and for exploring/optimizing the different implementations. To this purpose, the research group adopts and develops suitable simulation tools and, in parallel, carries out measurements for device characterization and model validation. 

ERC Fields

  • PE3_5 - Semiconductors and insulators: material growth, physical properties 
  • PE7_2 - Electrical and electronic engineering: semiconductors, components, systems 
  • PE7_3 - Simulation engineering and modelling 

Scientific Coordinator: Prof. Antonio Gnudi

Faculty

Giorgio Baccarani

Emeritus Professor

Adjunct professor

Luigi Balestra

Junior assistant professor (fixed-term)

Elena Gnani

Associate Professor

Antonio Gnudi

Associate Professor

Susanna Reggiani

Full Professor

Massimo Rudan

Emeritus Professor

Adjunct professor

PhD Students and Research Fellows