The research activity of the group addresses the physical modeling, numerical simulation, and characterization of solid-state electron devices and sensors fabricated with emerging technologies. Specifically, the activities focus on devices based on carbon, 2D semiconductors, ferroelectric materials, III-V semiconductors, tunnel-effect transistors, phase-change memories, advanced silicon, GaN/AlGaN and SiC devices for high-voltage applications. Physical modeling is an essential aspect for better understanding the physical properties of the devices under investigation, and for exploring/optimizing the different implementations. To this purpose, the research group adopts and develops suitable simulation tools and, in parallel, carries out measurements for device characterization and model validation.
ERC Fields
- PE3_5 - Semiconductors and insulators: material growth, physical properties
- PE7_2 - Electrical and electronic engineering: semiconductors, components, systems
- PE7_3 - Simulation engineering and modelling
Scientific Coordinator: Prof. Antonio Gnudi