Physical modeling, numerical simulation, and characterization of solid-state electron devices and sensors (ModSim)

The research activity of the group addresses the physical modeling, numerical simulation, and characterization of solid-state electron devices and sensors fabricated with emerging technologies. Specifically, the activities focus on devices based on carbon, 2D semiconductors, ferroelectric materials, III-V semiconductors, tunnel-effect transistors, phase-change memories, advanced silicon, GaN/AlGaN and SiC devices for high-voltage applications. Physical modeling is an essential aspect for better understanding the physical properties of the devices under investigation, and for exploring/optimizing the different implementations. To this purpose, the research group adopts and develops suitable simulation tools and, in parallel, carries out measurements for device characterization and model validation. 

ERC Fields

  • PE3_5 - Semiconductors and insulators: material growth, physical properties 
  • PE7_2 - Electrical and electronic engineering: semiconductors, components, systems 
  • PE7_3 - Simulation engineering and modelling 

Scientific Coordinator: Prof. Antonio Gnudi

Faculty

Elena Gnani

Associate Professor

Antonio Gnudi

Associate Professor

Susanna Reggiani

Full Professor

Massimo Rudan

Alma Mater Honorary Professor

Adjunct professor

PhD Students and Research Fellows

Luigi Balestra

PhD Student

Federico Giuliano

PhD Student

Research fellow

Torna su