Nanoscale FinFET Technology for Circuit Designers

Il seminario sarà tenuto dal Dr. Alvin Loke, Fellow, NXP Semiconductors

  • Data: 23 settembre 2022 dalle 11:30 alle 13:00

  • Luogo: Aula 1.4, viale Risorgimento 2, Bologna e online su Teams

  • Modalità d'accesso: Ingresso libero

About the speaker

Alvin Loke is a Fellow at NXP Semiconductors in San Diego, having worked on CMOS nodes spanning 250nm to 2nm at Agilent, AMD, Qualcomm, and TSMC. He received his B.A.Sc. with highest honors from the University of British Columbia, and M.S. and Ph.D. from Stanford. Upon graduating, he spent several years in CMOS process integration. Since 2001, he has worked on analog/mixed-signal design focusing on a variety of wireline links, design/model/technology interface, and analog design methodologies. He has been an active IEEE Solid-State Circuits Society (SSCS) volunteer since 2003, having served as Distinguished Lecturer, CICC Committee Member, Webinar Chair, Denver and San Diego Chapter Chair, as well as JSSC and SSCL Guest Editor. He currently serves in the SSCS AdCom, VLSI Symposium committee, and as SSCS Chapters Chair. Alvin has authored over 60 publications including the CICC 2018 Best Paper and invited short courses at ISSCC, VLSI Symposium, and BCICTS. He holds 29 US patents.


CMOS scaling maintains economic relevance with 5nm SoCs already in high-volume production for over two years and 3nm well into risk production. Modest feature size reduction and design/technology innovations co-optimized for logic and SRAM scaling continue to offer compelling node-to-node power, performance, area, and cost benefits. In this tutorial, we start with a brief history of transistor evolution to motivate the migration from planar to the fully depleted FinFET. We will summarize the key process technology elements that have enabled the finFET CMOS nodes, highlighting the resulting device technology characteristics and challenges impacting design. To address the growing effort required for physical design closure, we cover design strategies including density-friendly layout, continuous active area layout, and template-based analog cells. We conclude with a discussion of what remains in finFET development and a peek at transistor architectures on the horizon.